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US 2016/0111298 A1Published application
Etching method using plasma, and method of fabricating semiconductor device including the etching method
AssigneeSamsung Electronics Co., Ltd.
InventorsGo-jun Kim, Vladimir Volynets, Sang-jin An, Hee-jeon Yang, Sang-heon Lee, Sung-keun Cho, Xinglong Chen, In-ho Choi
Life of this patent
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Abstract
An etching method using plasma includes generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS, and etching an etching object by supplying water (H2O) and the plasma to a process chamber.
Claims22
1-7. (canceled)
An etching method using plasma, the method comprising:
- generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS;
- and
- etching an etching object by supplying water (H2O) and hydrogen (H2) to a process chamber with the plasma.
An etching method using plasma, the method comprising:
- generating plasma by supplying process gases to a process chamber and applying power to the process chamber;
- and
- etching an etching object by supplying at least one of water (H2O) and hydrogen (H2) to the process chamber with the plasma.
22-27. (canceled)
An etching method using plasma, the method comprising:
- generating a plasma;
- and
- supplying at least one of water (H2O) and, hydrogen (H2) to an etching object in a process chamber in a presence of the plasma to etch the etching object.
Dependencies are inferred from the claim text.