CMOS Vt CONTROL INTEGRATION BY MODIFICATION OF METAL-CONTAINING GATE ELECTRODES
AssigneeTokyo Electron Limited
InventorsGenji Nakamura, Toshio Hasegawa
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Abstract
A method of forming a semiconductor device is disclosed in various embodiments. The method includes providing a substrate containing first and second device regions, and a high-k film on the substrate, depositing a metal nitride gate electrode film on the high-k film, forming a metal-containing gate electrode film on the metal nitride gate electrode film in the second device region but not in the first device region, and depositing a Si-based cap layer on the metal-containing gate electrode film in the second device region and on the metal nitride gate electrode film in the first device region.
Claims20
A method of forming a semiconductor device, the method comprising:
- providing a substrate containing first and second device regions, and a high-k film on the substrate;
- depositing a metal nitride gate electrode film on the high-k film;
- forming a metal-containing gate electrode film on the metal nitride gate electrode film in the second device region but not in the first device region;
- and
- depositing a Si-based cap layer on the metal-containing gate electrode film in the second device region and on the metal nitride gate electrode film in the first device region.
A method of forming a semiconductor device, the method comprising:
- providing a substrate containing first and second device regions, and a high-k film on the substrate;
- depositing a first TiN gate electrode film on the high-k film;
- forming a second TiN gate electrode film on the first TiN gate electrode film in the second device region but not in the first device region;
- and
- depositing a Si cap layer on the first TiN gate electrode film in the first device region and on the second TiN gate electrode film in the second device region.
Dependencies are inferred from the claim text.