US 2016/0111289 A1Published application

Semiconductor Device and Method for Forming a Semiconductor Device

AssigneeInfineon Technologies AG

InventorsOliver Humbel, Hans Millonig

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Abstract

A method includes forming an emitter at the first side of a semiconductor substrate by doping, wherein the dopant concentration is higher in the emitter than in the edge region; growing an oxide layer on the first side by annealing, wherein the oxide layer has a first thickness in a first region covering the emitter, and a second thickness in a second region covering the edge region. The first thickness is larger than the second thickness. Heavy metal ions are implanted through the first side with a first energy, and with a second energy, wherein the first energy and the second energy are different, such that the implanted heavy metal concentration in the edge region is higher than in the emitter due to an absorption of the oxide layer covering the emitter, resulting in a lower charge carrier lifetime in the edge region than in the emitter.

Claims15

Dependent claims

A method for fabricating a semiconductor component including a semiconductor substrate with a first side and an edge region, the method comprising:

forming an emitter at the first side of the semiconductor substrate by doping with a dopant, wherein a dopant concentration of the semiconductor substrate is higher in the emitter than in the edge region,
growing an oxide layer on the first side, at least partially by annealing, wherein the oxide layer has a first thickness in a first region covering the emitter, and wherein the oxide layer has a second thickness in a second region covering the edge region;
and
wherein the first thickness is larger than the second thickness,
implanting heavy metal ions through the first side with a first energy, and
implanting heavy metal ions through the first side with a second energy, wherein the first energy and the second energy are differently chosen, such that the implanted heavy metal concentration in the edge region is higher than in the emitter due to an absorption of a part of the heavy metal ions with the lower energy in the first region of the oxide layer covering the emitter, resulting in a lower charge carrier lifetime in the edge region than in the emitter.

3 more elements

Dependencies are inferred from the claim text.