Low-k damage repair and pore sealing agents with photosensitive end groups
AssigneeLam Research Corporation
InventorsGeorge Andrew Antonelli, Andrew John McKerrow
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Abstract
Methods of repairing damaged low-k dielectric films using UV-activated photosensitive organic compounds are described herein. Methods of sealing pores by exposing porous dielectric films to UV-activated large photosensitive organic compounds are also described. Methods also include mechanically reinforcing dielectric films using photosensitive organic compounds activated by UV radiation. Compounds include at least one photosensitive end group, such as an unsaturated bond or group with high ring strain.
Claims22
A method of sealing pores in a low-k dielectric substrate, the method comprising:
- exposing a photosensitive organic compound to ultraviolet radiation to form an activated species, and
- exposing the substrate to the activated species to thereby seal pores,
- wherein the diameter of the photosensitive organic compound is greater than about 1 nm.
A method of mechanically reinforcing a low-k dielectric substrate, the method comprising:
- exposing a photosensitive organic compound to ultraviolet radiation to form an activated species, and
- exposing the substrate to the activated species,
- wherein the organic compound comprises at least two photosensitive groups, and
- wherein exposing the substrate to the activated species increases silicon-oxide cross-linking in the dielectric substrate.
A method of repairing damage in a low-k dielectric substrate, the method comprising:
- exposing a photosensitive organic compound to ultraviolet radiation to form an activated species, and
- exposing the substrate to the activated species,
- wherein the photosensitive organic compound is selected from the group consisting of non-vinyl aryls, non-aromatic cyclic structures, and alcohols, and
- wherein low-k dielectric damage in the substrate is repaired.
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Dependencies are inferred from the claim text.