Manufacturing method of semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei YAMAZAKI
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Abstract
One object is to have stable electrical characteristics and high reliability and to manufacture a semiconductor device including a semi-conductive oxide film. Film formation is performed by a sputtering method using a target in which gallium oxide is added to a material that is easy to volatilize compared to gallium when the material is heated at 400° C. to 700° C. like zinc, and a formed film is heated at 400° C. to 700° C., whereby the added material is segregated in the vicinity of a surface of the film and the oxide is crystallized. Further, a semi-conductive oxide film is deposited thereover, whereby a semi-conductive oxide having a crystal which succeeds a crystal structure of the oxide that is crystallized by heat treatment is formed.
Claims14
A manufacturing method of a semiconductor device, comprising the steps of:
- forming a first film that contains Ga, Zn and O, over a substrate while a temperature of the substrate in film formation is set to higher than or equal to 100° C. and lower than or equal to 600° C.;
- and
- forming a second film that is in contact with the first film,
- wherein a ratio of Ga/(Ga+Zn) of the first film is greater than or equal to 0.2 and less than 0.8, and
- wherein the second film comprises crystalline In—Ga—Zn-based oxide semiconductor.
A manufacturing method of a semiconductor device, comprising the steps of:
- forming a first film that contains Ga, Zn and O, over a substrate while a temperature of the substrate in film formation is set to higher than or equal to 100° C. and lower than or equal to 600° C.;
- heating the first film, and
- forming a second film that is in contact with the first film,
- wherein a ratio of Ga/(Ga+Zn) of the first film is greater than or equal to 0.2 and less than 0.8, and
- wherein the second film comprises crystalline In—Ga—Zn-based oxide semiconductor.
Dependencies are inferred from the claim text.