US 2016/0111280 A1 · METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Abstract

Electrical characteristics of transistors using an oxide semiconductor are greatly varied in a substrate, between substrates, and between lots, and the electrical characteristics are changed due to heat, bias, light, or the like in some cases. In view of the above, a semiconductor device using an oxide semiconductor with high reliability and small variation in electrical characteristics is manufactured. In a method for manufacturing a semiconductor device, hydrogen in a film and at an interface between films is removed in a transistor using an oxide semiconductor. In order to remove hydrogen at the interface between the films, the substrate is transferred under a vacuum between film formations. Further, as for a substrate having a surface exposed to the air, hydrogen on the surface of the substrate may be removed by heat treatment or plasma treatment.

Claims1

Dependent claims

A method for manufacturing a semiconductor device, comprising the steps of:

performing dehydration treatment or dehydrogenation treatment on a substrate in a substrate processing chamber;
introducing the substrate which is dehydrated or dehydrogenated into a first film formation chamber without exposure to air, and forming a first insulating film over the substrate in the first film formation chamber;
introducing the substrate into a second film formation chamber without exposure to air, and forming an oxide semiconductor film over the first insulating film in the second film formation chamber;
and
introducing the substrate into a third film formation chamber without exposure to air and forming an oxide conductive film over the oxide semiconductor film in the second film formation chamber.

2 more elements

Dependencies are inferred from the claim text.

Method for manufacturing semiconductor device

Life of this patent

Method for manufacturing semiconductor device

Life of this patent

Abstract

Claims1