Composition for forming ferroelectric thin film, and method for manufacturing same
AssigneeMitsubishi Materials Corporation
InventorsToshihiro Doi, Hideaki Sakurai, Nobuyuki Soyama
Life of this patent
Estimating the term…
Loading patent…
AssigneeMitsubishi Materials Corporation
InventorsToshihiro Doi, Hideaki Sakurai, Nobuyuki Soyama
Estimating the term…
A composition containing a precursor of a ferroelectric thin film, a solvent, and a reaction control substance, can form a ferroelectric thin film by temporary firing and permanent firing of a coating film. The composition contains the reaction control substance in such an amount that a Young's modulus of a film formed in a step of temporary firing at a temperature of 200° C. to 300° C. becomes equal to or less than 42 GPa, and a Young's modulus of a film formed in a step of permanent firing at a temperature of 400° C. to 500° C. becomes equal to or greater than 55 GPa. Thus a thin film having high crystallinity can be formed which substantially does not crack at the time of permanent firing even if the thickness of the coating film formed per single coating operation is increased.
A composition for forming a ferroelectric thin film that forms a ferroelectric thin film by temporary firing and permanent firing of a coating film, comprising:
A method for manufacturing a composition for forming a ferroelectric thin film, comprising:
Dependencies are inferred from the claim text.