Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide

A microelectronic device comprising:

• an insulating metal oxide layer;
• wherein the insulating metal oxide layer is prepared by a process comprising:
• introducing a vapor of a first reactant component into a deposition chamber;
• introducing a vapor of a second reactant component into the deposition chamber;
• alternately repeating the introduction of the first reactant component and the second reactant component;
• wherein deposition of the first reactant component and the second reactant component are self-limiting;
• wherein said first reactant component comprises a metal alkylamide;
• wherein said second reactant component interacts with the deposited first reactant component to form the insulating metal oxide layer;
• and
• wherein said insulating metal oxide layer comprises oxygen and the metal from the metal alkylamide.