Method for forming nitride semiconductor device
AssigneeSumitomo Electric Industries, Ltd.
InventorsKeiichi Yui, Ken Nakata, Isao Makabe, Tsuyoshi Kouchi
Life of this patent
Estimating the term…
Abstract
A method for producing a nitride semiconductor device is disclosed. The method includes steps of: forming a channel layer, an InAlN doped layer sequentially on the substrate, raising a temperature of the substrate as supplying a gas source containing In, and/or another gas source containing Al, and growing GaN layer on the InAlN doped. Or, the method grows the channel layer, the InAlN layer, and another GaN layer sequentially on the substrate, raising the temperature of the substrate, and growing the GaN layer. These methods suppress the sublimation of InN from the InAlN layer.
Claims19
A method for forming a semiconductor device, comprising steps of:
- growing a channel layer epitaxially on a substrate, the channel layer being made of nitride semiconductor material;
- growing an InAlN layer epitaxially on the channel layer at a first temperature;
- raising a temperature of the substrate from the first temperature to a second temperature as supplying gas sources containing indium (In) and aluminum (Al);
- and
- growing a GaN layer epitaxially on the InAlN layer at the second temperature.
(canceled)
(canceled)
(canceled)
A method of forming a semiconductor device, comprising:
- growing a channel layer epitaxially on a substrate, the channel layer being made of nitride semiconductor material;
- growing an InAlN layer epitaxially on the channel layer at a first temperature;
- growing a first GaN layer epitaxially on the InAlN layer at a temperature within 50° C. higher than the first temperature;
- raising a temperature of the substrate to a second temperature from the temperature for growing the first GaN layer as supplying gas sources containing indium (In) and aluminum (Al);
- and
- growing a second GaN layer epitaxially on the first GaN layer at the second temperature.
Dependencies are inferred from the claim text.