Vapor deposition of silicon-containing films using penta-substituted disilanes
AssigneeL'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
InventorsJean-Marc GIRARD, Changhee KO, Ivan OSHCHEPKOV, Kazutaka YANAGITA, Shingo OKUBO, Naoto NODA, Julien GATINEAU
Life of this patent
Estimating the term…
Abstract
Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.
Claims19
A thermal ALD method of depositing a silicon oxide film on a substrate, the method comprising:
- a) setting a reactor containing the substrate to a temperature ranging from approximately 500° C. to approximately 700° C. and a pressure ranging from approximately 0.1 to approximately 10 Torr (13 Pa to 1,333 Pa);
- b) introducing a vapor of pentachlorodisilane into the reaction chamber to form a silicon-containing layer on the substrate;
- c) reacting an oxidizing gas with the silicon-containing layer to form a layer of the silicon oxide film having a thickness ranging from approximately 0.4 Å (0.04 nm) to approximately 1.5 Å (0.15 nm);
- d) repeating steps b) and c).
A thermal ALD method of depositing a silicon nitride film on a substrate, the method comprising:
- a) Setting a reactor containing the substrate to a temperature ranging from approximately 450° C. to approximately 650° C. and a pressure ranging from approximately 0.1 to approximately 100 Torr (13 Pa to 1,333 Pa);
- b) Introducing a vapor of pentachlorodisilane into the reaction chamber to form a silicon-containing layer on the substrate;
- c) Reacting an nitrogen containing reactant with the silicon-containing layer to form a layer of the silicon nitride film having a thickness ranging from approximately 0.3 Å (0.03 nm) to approximately 2 Å (0.2 nm) and a refractive index ranging from approximately 1.8 to 2.1;
- d) Repeating steps b) and c).
A thermal vapor deposition method of depositing a silicon film on a substrate, the method comprising:
- a) Setting a reactor containing the substrate to a temperature ranging from approximately 550° C. to approximately 800° C. and a pressure ranging from approximately 0.1 to approximately 100 Torr (13 Pa to 13,332 Pa);
- b) Introducing a vapor of pentachlorodisilane into the reaction chamber to form the silicon film on the substrate.
Dependencies are inferred from the claim text.