Oxide sintered body and sputtering target, and method for producing same
AssigneesKobelco Research Institute, Inc., Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
InventorsYuki TAO, Kenta HIROSE, Norihiro JIKO, Mototaka OCHI
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Abstract
An oxide sintered body is obtained by sintering indium oxide, gallium oxide and tin oxide. The oxide sintered body has a relative density of 90% or more and an average grain size of 10 μm or less. In the oxide sintered body, the relations 30 atomic %≦[In]≦50 atomic %, 20 atomic %≦[Ga]≦30 atomic % and 25 atomic %≦[Sn]≦45 atomic % are satisfied. [In], [Ga] and [Sn] are ratios of contents (atomic %) of indium gallium and tin, respectively, to all metal elements contained in the oxide sintered body. The oxide sintered body has an InGaO3 phase which satisfies the relation [InGaO3]≧0.05.
Claims12
An oxide sintered body obtained by sintering indium oxide, gallium oxide and tin oxide, wherein
- the oxide sintered body has a relative density of 90% or more,
- the oxide sintered body has an average grain size of 10 μm or less,
- the following expressions (1) to (3) of contents of indium [In], gallium [Ga] and tin [Sn] in the oxide sintered body, expressed as atomic percentages (atomic %) relative to the total amount of metal element atoms excluding oxygen, are satisfied:
- 30 atomic %≦[In]≦50 atomic % (1),
- 20 atomic %≦[Ga]≦30 atomic % (2),
- 25 atomic %≦[Sn]≦45 atomic % (3);
- and
- the oxide sintered body comprises an InGaO3 phase which satisfies the following expression (4), as determined by X-ray diffractometry:
- [InGaO3]≧0.05 (4);
- wherein
- [InGaO3]=(I(InGaO3)/(I(InGaO3)+I(In2O3)+I(SnO2)), and
- I(InGaO3), I(In2O3) and I(SnO2) are measured values of diffraction intensities of the InGaO3 phase, an In2O3 phase and an SnO2 phase, respectively, as identified by X-ray diffractometry.
Dependencies are inferred from the claim text.