Gas supply delivery arrangement including a gas splitter for tunable gas flow control
AssigneeLam Research Corporation
InventorsMark Taskar, Iqbal Shareef, Anthony Zemlock, Ryan Bise, Nathan Kugland
Life of this patent
Estimating the term…
Loading patent…
AssigneeLam Research Corporation
InventorsMark Taskar, Iqbal Shareef, Anthony Zemlock, Ryan Bise, Nathan Kugland
Estimating the term…
A gas supply delivery arrangement of a plasma processing system for processing a substrate with gases introduced through at least first, second, and third gas injection zones comprises process gas supply inlets and tuning gas inlets. A mixing manifold comprises gas sticks in fluid communication with a process gas supply and tuning gas sticks in fluid communication with a tuning gas supply. A first gas outlet delivers gas to the first gas injection zone, a second gas outlet delivers gas to the second gas injection zone, and a third gas outlet delivers gas to the third gas injection zone. A gas splitter is in fluid communication with the mixing manifold, and includes a first valve arrangement which splits mixed gas exiting the mixing manifold into a first mixed gas supplied to the first gas outlet and a second mixed gas supplied to the second, and/or third gas outlets.
A gas supply delivery arrangement for supplying process gas to a chamber of a plasma processing system wherein a semiconductor substrate is processed with gases introduced through at least first, second, and third gas injection zones, comprising:
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
A gas supply delivery arrangement of a semiconductor substrate processing apparatus comprising:
(canceled)
(canceled)
Dependencies are inferred from the claim text.