Method for forming resist film and charged particle beam writing method

A method for forming a resist film, comprising the steps of:

• forming a first resist film on a light shielding film formed on a substrate, by using a spin coating method;
• forming a first protective film on the first resist film;
• simultaneously removing a region of the first protective film and a region of the first resist film corresponding to the region of the first protective film, and exposing a portion of the light shielding film;
• forming a second resist film on the first protective film and an exposed portion of the light shielding film on the substrate using a spin coating method to provide a first region in which the second resist film is formed on the light shielding film, and a second region in which the second resist film is formed on the protective film;
• separately forming a region in which the first resist film is formed, and a region in which the second resist film is formed on the light shielding film, by simultaneously removing the first protective film and the second resist film in the second region;
• forming a second protective film on the first resist film in the second region and on the second resist film in the first region after removing the first protective film;
• simultaneously removing a portion of the second protective film and a portion of at least one of the first resist film and the second resist film under the second protective film to provide a removing region in which the light shielding film is exposed;
• forming a third resist film on the second protective film and in the removing region using the spin coating method to provide a third region in which the third resist film is formed in the removing region, and a fourth region in which the third resist film is formed on the second protective film that is formed on the first resist film, and the second resist film;
• and
• separately forming a region in which the first resist film is provided, a region in which the second resist film is provided, and a region in which the third resist film is provided, on the light shielding film, by simultaneously removing the second protective film and the third resist film in the fourth region.

A charged particle beam writing method, comprising:

• forming a first resist film on a light shielding film formed on a substrate, by using a spin coating method;
• forming a protective film on the first resist film;
• simultaneously removing a region of the protective film and a region of the first resist film corresponding to the region of the protective film, and exposing a portion of the light shielding film;
• forming a second resist film on the protective film and an exposed portion of the light shielding film on the substrate using a spin coating method, and providing a first region in which the second resist film is formed on the light shielding film and a second region in which the second resist film is formed on the protective film;
• separately forming a region in which the first resist film is provided on the light-shielding film and a region in which the second resist film is provided, by simultaneously removing the protective film and the second resist in the second region;
• and
• writing a pattern on each of the first resist film and the second resist film using a charged particle beam.