Particle-optical systems and arrangements and particle-optical components for such systems and arrangements

A particle-optical arrangement, comprising:

• at least one charged-particle source for generating at least one beam of charged particles;
• at least one multi-aperture plate having a plurality of apertures formed in the multi-aperture plate, wherein the plurality of apertures being arranged in a first pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture aperture plate;
• a first focusing lens providing a focusing field in a first region between the charged-particle source and the multi-aperture plate;
• and
• a decelerating electrode providing a decelerating field in a second region in between the first focusing lens and the multi-aperture plate, such that a kinetic energy of the charged particles passing the first focusing lens is higher than a kinetic energy of the charged particles passing the multi-aperture plate.

A particle-optical arrangement, comprising:

• at least one charged-particle source for generating at least one beam of charged particles,
• at least one multi-aperture plate having a plurality of apertures formed in the multi-aperture plate, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture aperture plate;
• a first focusing lens providing a focusing field in a first region adjacent to the multi-aperture plate in a direction of the at least one beam;
• and
• an energy changing electrode providing an electrical field for changing a kinetic energy of charged particles of the beam in a second region adjacent to the multi-aperture plate in the direction of the at least one beam, and wherein the first region where the focusing field is provided and the second region where the energy changing field is provided are overlapping regions.

A multi-electron-beamlet inspection system, comprising:

• a stage for mounting an object to be inspected;
• at least one electron source for generating at least one electron beam;
• at least one multi-aperture plate having a plurality of apertures formed in the plate, wherein the plurality of apertures is arranged in a first pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the aperture plate;
• a first focusing lens providing a focusing field in a first region between the charged-particle source and the multi-aperture plate;
• a decelerating electrode providing a decelerating field in a second region in between of the first focusing lens and the multi-aperture plate, such that a kinetic energy of the charged particles passing the first focusing lens is higher than a kinetic energy of the charged particles passing the multi-aperture plate;
• an objective lens for focusing the array of electron beamlets on the object to be inspected;
• and
• a detector arrangement for detecting secondary electrons from the object generated by the plurality of beamlets, to produce an array of signals corresponding to the secondary electrons generated by substantially a single electron beamlet in the plurality of beamlets.

A charged-particle multi-beamlet lithography system for writing a pattern on a resist coated object, the system comprising:

• a stage for mounting the object;
• at least one electron source for generating at least one electron beam;
• at least one multi-aperture plate having a plurality of apertures formed in the plate, wherein the plurality of apertures being arranged in a first pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the aperture plate;
• a first focusing lens providing a focusing field in a first region between the charged-particle source and the multi-aperture plate;
• a decelerating electrode providing a decelerating field in a second region in between of the first focusing lens and the multi-aperture plate, such that a kinetic energy of the charged particles passing the first focusing lens is higher than a kinetic energy of the charged particles passing the multi-aperture plate;
• an objective lens for focusing the plurality of beamlets on the object to be inspected;
• and
• an objective lens for focusing the plurality of beamlets on the object.

A method of forming a plurality of charged-particle beamlets, the method comprising:

• generating at least one beam of charged particles, the particles having a first kinetic energy;
• providing first focusing lens on the at least one beam of charged particles in a first region;
• forming the plurality of charged-particle beamlets from the at least one beam of charged particles with at least one multi-aperture plate disposed downstream of the first region and having a plurality of apertures formed in the plate;
• providing a decelerating field in a second region downstream of the first region such that the particles have a second kinetic energy downstream of the second region, wherein the second kinetic energy is less than the first kinetic energy.

A method of multi-electron-beamlet inspection of a substrate, the method comprising:

• generating at least one beam of electrons, the electrons having a first kinetic energy;
• providing first focusing lens on the at least one beam of electrons in a first region;
• forming a plurality of electron beamlets from the at least one beam of electrons with at least one multi-aperture plate disposed downstream of the first region and having a plurality of apertures formed in the plate;
• providing a decelerating field in a second region downstream of the first region such that the electrons have a second kinetic energy downstream of the second region, wherein the second kinetic energy is less than the first kinetic energy;
• and
• forming an array of electron beam spots with the plurality of beamlets on the substrate.

A method of writing a pattern on a resist coated object, the method comprising:

• generating at least one beam of electrons, the electrons having a first kinetic energy;
• providing first focusing lens on the at least one beam of electrons in a first region;
• forming a plurality of electron beamlets from the at least one beam of electrons with at least one multi-aperture plate disposed downstream of the first region and having a plurality of apertures formed in the plate;
• providing a decelerating field in a second region downstream of the first region such that the electrons have a second kinetic energy downstream of the second region, wherein the second kinetic energy is less than the first kinetic energy;
• and
• forming an array of electron beam spots on the resist coated object with the plurality of beamlets.

A multi-electron-beamlet inspection system, comprising:

• a stage for mounting an object to be inspected;
• at least one charged-particle source for generating a beam of electrons,
• at least one multi-aperture plate having a plurality of apertures formed in the plate, wherein the plurality of apertures being arranged in a first pattern, and wherein a plurality of electron beamlets is formed from the beam of electrons downstream of the aperture plate;
• a first focusing lens providing a focusing field in a first region adjacent to the multi-aperture plate in a direction of the at least one beam;
• an energy changing electrode providing an electrical field for changing a kinetic energy of electrons of the beam in a second region adjacent to the multi-aperture plate in the direction of the at least one beam, and wherein the first region where the focusing field is provided and the second region where the energy changing field is provided are overlapping regions;
• and
• a detector arrangement for detecting secondary electrons from the object generated by the plurality of beamlets, to produce an array of signals corresponding to the secondary electrons generated by substantially a single beamlet in the plurality of beamlets.

A charged-particle multi-beamlet lithography system for writing a pattern on a resist coated object, the system comprising:

• a stage for mounting the object;
• at least one charged-particle source for generating at least one charged-particle beam;
• at least one multi-aperture plate having a plurality of apertures formed in the plate, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the aperture plate;
• a first focusing lens providing a focusing field in a first region adjacent to the multi-aperture plate in a direction of the at least one beam;
• and
• an energy changing electrode providing an electrical field for changing a kinetic energy of charged particles of the beam in a second region adjacent to the multi-aperture plate in the direction of the at least one beam, and wherein the first region where the focusing field is provided and the second region where the energy changing field is provided are overlapping regions;
• an objective lens for focusing the plurality of beamlets on the object.

A method of multi-electron-beamlet inspection of a substrate, the method comprising:

• generating at least one beam of charged particles, the particles;
• forming the plurality of charged-particle beamlets from the at least one beam of charged particles with at least one multi-aperture plate having a plurality of apertures formed in the plate;
• providing a focusing field and a kinetic energy changing field overlapping the focusing field, wherein the energy changing field changes a kinetic energy of the at least one beam of charged particles upstream of the at least one multi-aperture plate;
• and
• forming an array of electron beam spots with the plurality of beamlets on the substrate.

A method of writing a pattern on a resist coated object, the method comprising:

• generating at least one beam of charged particles, the particles;
• forming the plurality of charged-particle beamlets from the at least one beam of charged particles with at least one multi-aperture plate having a plurality of apertures formed in the plate;
• providing a focusing field and a kinetic energy changing field overlapping the focusing field, wherein the energy changing field changes a kinetic energy of the at least one beam of charged particles upstream of the at least one multi-aperture plate;
• and
• forming an array of electron beam spots on the resist coated object with the plurality of electron beamlets.