Ion Beam Uniformity Control
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsAlexandre Likhanskii, Svetlana B. Radovanov, Bon-Woong Koo
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Abstract
A plasma chamber having improved controllability of the ion density of the extracted ribbon ion beam is disclosed. A plurality of pairs of RF biased electrodes is disposed on opposite sides of the extraction aperture in a plasma chamber. In some embodiments, one of each pair of RF biased electrodes is biased at the extraction voltage, while the other of each pair is coupled to a RF bias power supply, which provides a RF voltage having a DC component and an AC component. In another embodiment, both of the electrodes in each pair are coupled to a RF biased power supply. A blocker may be disposed in the plasma chamber near the extraction aperture. In some embodiments, RF biased electrodes are disposed on the blocker.
Claims17
A plasma chamber, comprising:
- a power source to generate a plasma within the plasma chamber;
- a chamber wall having an extraction aperture through which ions from the plasma are extracted, the chamber wall biased at an extraction voltage;
- a blocker disposed within the plasma chamber proximate the extraction aperture, biased at the extraction voltage;
- an RF biased electrode disposed on the blocker;
- and
- an RF bias power supply to supply a RF voltage to the RF biased electrode.
A plasma chamber, comprising:
- a power source to generate a plasma within the plasma chamber;
- a chamber wall having an extraction aperture through which ions from the plasma are extracted, the chamber wall biased at an extraction voltage;
- a blocker disposed within the plasma chamber proximate the extraction aperture;
- an RF biased electrode disposed on the blocker;
- and
- an RF bias power supply to supply a RF voltage to the RF biased electrode.
A plasma chamber, comprising:
- a power source to generate a plasma within the plasma chamber;
- a chamber wall having an extraction aperture through which ions from the plasma are extracted, the chamber wall biased at an extraction voltage;
- a blocker, comprising a conductive material, disposed within the plasma chamber proximate the extraction aperture;
- and
- an RF bias power supply to supply a RF voltage to the blocker.
Dependencies are inferred from the claim text.