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US 2016/0111172 A1Published application
Semiconductor device
AssigneeSK hynix Inc.
InventorHong-Jung KIM
Life of this patent
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Abstract
A semiconductor device includes: a plurality of repair fuse circuits configured to each program a repair target address; and an enable signal generation circuit configured to generate at least one enable signal in response to a source signal and provide the enable signal to each of the repair fuse circuits in common. Since the semiconductor device may iteratively generate a rupture enable signal through a feedback scheme, the area occupied by a circuit, such as a shift register or a D flip-flop may be saved.
Claims3
1-8. (canceled)
A semiconductor device, comprising:
- a rupture enable signal generation block configured to iteratively generate N rupture enable signals M times in response to a rupture source signal, wherein N and M are integers equal to or greater than 1;
- M unit latch blocks configured to latch N bits of a repair target address, respectively, in response to a latch control signal;
- M unit rupture signal generation blocks configured to respectively generate N rupture signals in response to the N rupture enable signals and the latched N bit addresses outputted from the M unit latch blocks, wherein the N rupture signals are sequentially generated on a unit block basis in response to a selection enable signal;
- and
- M unit fuse blocks configured to be programmed in response to the N rupture signals that are outputted from the M unit rupture signal generation blocks.
2 more elements
Dependencies are inferred from the claim text.