Methods of operating a nonvolatile memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsSunil SHIM, Joon-sung LIM, Jin-Kyu KANG, Euido KIM, Jang-Gn YUN
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Abstract
An operating method of a nonvolatile memory device is provided which sequentially performs a plurality of erase loops to erase at least one of a plurality of memory blocks. The operating method comprises performing at least one of the plurality of erase loops; performing a post-program operation on the at least one memory block after the at least one erase loop is executed; and performing remaining erase loops of the plurality of erase loops. The post-program operation is not performed when each of the remaining erase loops is executed.
Claims24
A method of operating a nonvolatile memory device which sequentially performs a plurality of erase loops to erase a memory block, the method comprising:
- performing at least one of the erase loops;
- performing a post-program operation on the memory block after the at least one erase loop is performed;
- and
- performing the remaining erase loops,
- wherein the post-program operation is not performed when each of the remaining erase loops is performed.
(canceled)
10-11. (canceled)
A method of erasing a memory block of a nonvolatile memory device, the memory block being formed on a substrate, the method comprising:
- applying a first erase voltage to the substrate;
- applying an erase verification voltage to a plurality of word lines that are connected to the memory block to check an erase state of the memory block;
- applying a post program voltage to the plurality of word lines to post-program the memory block;
- and then
- applying a second erase voltage to the substrate, a level of the second erase voltage being higher by an erase voltage increment than a level of the first erase voltage;
- applying the erase verification voltage to the plurality of word lines to check the erase state of the memory block;
- and then
- applying a third erase voltage to the substrate, a level of the third erase voltage being higher by the erase voltage increment than the level of the second erase voltage;
- and
- applying the erase verification voltage to the plurality of word lines to check the erase state of the memory block.
(canceled)
19-24. (canceled)
A method of erasing a memory block of a nonvolatile memory device, the method comprising:
- performing a first erase loop using a first erase scheme;
- and then
- detecting a threshold voltage distribution of the memory block;
- adjusting an erase voltage increment based on the detected threshold voltage distribution to provide an adjusted erase voltage increment;
- and
- performing a second erase loop using a second erase scheme that is different from the first erase scheme, wherein the adjusted erase voltage increment is used in performing the second erase loop.
Dependencies are inferred from the claim text.