Method for reading a third-dimensional embedded re-writeable non-volatile memory and registers

A system, comprising:

• a receiver circuit to receive a datum;
• and
• a voltage circuit configured to write the datum to a memory element configured to store the datum as one of a plurality of conductivity profiles and to retain the datum in the absence of electrical power;
• wherein the memory element comprises:
• a conductive oxide including mobile oxygen ions;
• and
• an electrolytic tunnel barrier electrically in series with the conductive oxide.

A method, comprising:

• receiving a datum;
• and
• applying a voltage across a memory element to write the datum to the memory element;
• wherein the memory element is configured to store the datum as one of a plurality of conductivity profiles and to retain the datum in an absence of electrical power;
• and
• wherein the memory element comprises:
• a conductive oxide including mobile oxygen ions;
• and
• an electrolytic tunnel barrier electrically in series with the conductive oxide.