Memory circuit and method of programming memory circuit

A method, comprising:

• performing an i-th programming attempt, comprising:
• applying a first voltage setting to a memory cell for a first period of time;
• obtaining a stored logical state of the memory cell after performing the applying the first voltage setting;
• and
• if the stored logical state differs from a first logical state and if an index i is less than a predetermined number:
• applying a second voltage setting to the memory cell;
• wherein
• the index i is a positive integer;
• and
• a first (index i=1) programming attempt is performed in response to a command for programming the first logical state to the memory cell.

A circuit, comprising:

• a plurality of memory cells;
• one or more driver circuits coupled with the plurality of memory cells;
• and
• a controller coupled with the one or more driver circuits, and configured to:
• set the one or more driver circuits to apply a first voltage setting to a memory cell of the plurality of memory cells for a first period of time in response to a command for programming a first logical state to the memory cell;
• obtain a stored logical state of the memory cell after the applying the first voltage setting operation;
• and
• if the stored logical state differs from the first logical state:
• set the one or more driver circuits to apply a second voltage setting to the memory cell of the plurality of memory cells.