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US 2016/0111149 A9Published application
Adaptive resistive device and methods thereof
AssigneeThe Board of Trustees of the University of Illinois
InventorsEric Pop, Feng Xiong, Albert D. Liao
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Abstract
A system that incorporates teachings of the subject disclosure may include, for example, a device including a nanoelectrode having a gap, and a resistive change material located in the gap, wherein an application of a voltage potential across first and second terminals of the nanoelectrode causes the resistive change material to modify at least one non-volatile memory state of the resistive change material. Additional embodiments are disclosed.
Claims24
A device, comprising:
- a nanoelectrode comprising a gap;
- and
- a resistive change material located in the gap, wherein an application of a voltage potential across first and second terminals of the nanoelectrode causes the resistive change material to modify at least one non-volatile memory state of the resistive change material.
A method, comprising:
- applying from a voltage source a first signal to a terminal of an electrode to program a non-volatile memory state of a resistive change material, wherein the resistive change material is located in a nanogap of the electrode;
- and
- receiving at a sensor a second signal supplied by the terminal indicating that the resistive change material has been programmed to the non-volatile memory state.
A method, comprising:
- constructing a nanoelectrode;
- creating a gap in the nanoelectrode thereby forming first and second segments of the nanoelectrode;
- and
- inserting a resistive change material in the gap, wherein a combination of the first and second segments of the nanoelectrode and the resistive change material forms a memory cell programmable to at least two memory states.
1 more element
Dependencies are inferred from the claim text.