Non-Volatile Semiconductor Memory Adapted to Store a Multi-Valued Data in a Single Memory Cell
AssigneesKabushiki Kaisha Toshiba, SanDisk Corporation
InventorsTomoharu Tanaka, Jian Chen
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Abstract
A non-volatile semiconductor memory device includes an electrically data rewritable non-volatile semiconductor memory cell and a write circuit for writing data in the memory cell, the write circuit writing a data in the memory cells by supplying a write voltage Vpgm and a write control voltage VBL to the memory cell, continuing the writing of the data in the memory cell by changing the value of the write control voltage VBL in response to an advent of a first write state of the memory cell and inhibiting any operation of writing a data to the memory cell by further changing the value of the write control voltage VBL to Vdd in response to an advent of a second write state of the memory cell.
Claims1
A non-volatile semiconductor memory device comprising:
- an electrically data rewritable non-volatile semiconductor memory cell;
- and
- a write circuit configured to write data in said memory cell, said write circuit writes a data in said memory cells by supplying a write voltage and a write control voltage to said memory cell, continues the writing of said data in said memory cell by changing the supply of said write control voltage to said memory cell in response to an advent of a first write state of said memory cell and inhibits any operation of writing a data to said memory cell by further changing the supply of said write control voltage to said memory cell in response to an advent of a second write state of said memory cell.
Dependencies are inferred from the claim text.