Memory with bit line control
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Lin YANG, Cheng Hung LEE, Hung-Jen LIAO, Kao-Cheng LIN, Jonathan Tsung-Yung CHANG, Yu-Hao HSU
Life of this patent
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Abstract
A memory comprises a first set of memory cells coupled between a first data line and a second data line. The memory also includes a first input/output (I/O) circuit coupled to the first data line and the second data line. The first I/O circuit is also coupled to a first control line to receive a first control signal and coupled to a first select line to receive a first select signal. The first I/O circuit is configured to selectively decouple the first data line and the second data line from the first I/O circuit during a sleep mode based on the first control signal and the first select signal.
Claims20
A memory, comprising:
- a first set of memory cells coupled between a first data line and a second data line;
- a first input/output (I/O) circuit configured to selectively decouple the first data line and the second data line from the first I/O circuit during a sleep mode based on a first control signal and a first select signal.
A memory, comprising:
- a first set of memory cells coupled between a first data line and a second data line;
- a first input/output (I/O) circuit configured to selectively decouple the first I/O circuit from the first data line and the second data line during a sleep mode based on a first control signal and a first select signal;
- and
- a first feedback circuit coupled between the first data line and the second data line, the first feedback circuit being configured to precharge one of the first data line and the second data line to a predefined voltage during a sleep mode.
A method for managing power in a memory, comprising:
- when a state of a first signal places a memory array in a sleep mode, enabling a charging circuit to charge a first set of data lines to a predefined voltage and disabling a second set of data lines to be in a floating state;
- and
- after activating the memory when a state of the first signal places the memory array in an active mode, charging the second set of data lines to the predefined voltage.
Dependencies are inferred from the claim text.