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AssigneePeking University
InventorsRu Huang, Yaokai Zhang, Yimao Cai, Fan Yang, Yue Pan, Zongwei Wang, Yichen Fang
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The present invention discloses a time correlation learning neuron circuit based on a resistive memristor and an implementation method thereof. The present invention utilizes switching characteristics of the resistive memristor. When two terminals of the resistive memristor are selected synchronously by two excitation signals, the voltage drop between these two terminals will change the resistance value of memristor, thereby achieving the on-off of a synapse connection and achieving the correction of the two excitation signals. Meanwhile the device also has a memory characteristic. Also, the previous excitation signal can be repeated. That is, the purpose of learning is achieved. Since the resistive memristor has a simple structure and a high degree of integration, it can achieve large-scale physical synapse connection in order to achieve more complex learning and even logic functions. The present invention has a good application prospect in a neuron cell computation.
A time correlation learning neuron cell circuit, including two neuron cell circuits (1) and (2), and a resistive memristor (3) as a synapse connection between the two neuron cell circuits, each neuron cell circuit further including a excitation signal terminal P, a synapse connection terminal M, a buffer, a control signal inverter N1, a first transmission gate T1 and a second transmission gate T2;
Dependencies are inferred from the claim text.