Photoresist compositions and methods of forming photolithographic patterns

A photoresist composition, comprising:

• a first polymer which is acid sensitive;
• a second polymer formed from a monomer having the following general formula (I):
• wherein:
• P is a polymerizable functional group;
• Z is a spacer unit chosen from optionally substituted linear or branched aliphatic and aromatic hydrocarbons, and combinations thereof, optionally with one or more linking moiety chosen from —O—, —S—, —COO— and —CONR1—, wherein R1 is chosen from hydrogen and substituted and unsubstituted C1 to C10 linear, branched and cyclic hydrocarbons;
• n is an integer from 0 to 5;
• and R is chosen from substituted and unsubstituted C1 to C20 linear, branched and cyclic hydrocarbons;
• wherein the second polymer is acid insensitive and free of fluorine and silicon, and wherein the second polymer has a surface energy lower than a surface energy of the first polymer;
• a photoacid generator;
• and
• a solvent.