Liquid Crystal Panel and Method of Forming Groove in Insulating Film

A liquid crystal panel, comprising:

• a first substrate and a second substrate that faces the first substrate;
• a first insulating film that is formed on a second substrate side of the first substrate;
• a second insulating film that is formed on the second substrate side of the first insulating film and is formed to include a plurality of films;
• a liquid crystal layer that is disposed between the second insulating film and the second substrate;
• a sealing material that surrounds an outer edge portion of the liquid crystal layer;
• and
• a plurality of thin film transistors that are insulated by the first and second insulating films,
• wherein the second insulating film has a groove that is formed at a part or whole of a peripheral edge portion located more inside than a position at which the second insulating film overlaps the sealing material, and has a higher barrier property for gas and/or liquid than the first insulating film at the first insulating film side, and
• wherein the groove has a bottom formed with the same material as a part of a material for forming the thin film transistor.

A method of forming a groove in an insulating film in a liquid crystal panel comprising:

• a first substrate and a second substrate that faces the first substrate;
• a first insulating film that is formed on the second substrate side of the first substrate;
• a second insulating film that is formed on the second substrate side of the first insulating film and is formed to include a plurality of films;
• a liquid crystal layer that is disposed between the second insulating film and the second substrate;
• a sealing material that surrounds an outer edge portion of the liquid crystal layer;
• and a plurality of thin film transistors that are insulated by the first and second insulating films, in which the groove is formed on the liquid crystal layer side of the second insulating film, the method comprising:
• forming an etching interruption film having a higher etching selectivity ratio than the second insulating film at a position corresponding to a part or whole of a peripheral edge portion located more inside than a position at which the second insulating film overlaps the sealing material in a part of a plurality of processes in which the thin film transistor is formed, and
• performing a dry etching process on a part or whole of the peripheral edge portion after formation of the second insulating film so as to form the groove from a side which is to face the liquid crystal layer.