US 2016/0109655 A1 · Ultra-Broadband Photonic Integrated Circuit Platform and Ultra-Broadband Photonic Integrated Circuit

Abstract

An ultra-broadband photonic integrated circuit platform that combines at least two types of waveguides that each transmit in different, but overlapping, spectral bands on a single chip. By combining the multiple waveguides, the bandwidth of the platform can be extended beyond the bandwidth of either waveguide alone. In an exemplary embodiment, an ultra-broadband photonic integrated circuit includes a nitride-on-insulator (NOI) waveguide configured to transmit optical beams in a first spectral band and a silicon-on-nitride-on-insulator (SONOI) waveguide configured to transmit optical beams in a second band, where the same material serves as the core material in the NOI waveguide and as the cladding material in the SONOI waveguide. In some embodiments, light-emitting devices are bonded to an upper surface of the waveguides. In some embodiments, the circuit includes beam-combining elements so that a single beam combining all of the input wavelengths is output from the circuit.

Claims26

Dependent claims

An ultra-broadband photonic integrated circuit platform, comprising:

a first waveguide and a second waveguide situated on a single chip, the first waveguide being configured to transmit optical signals having wavelengths in a first spectral band (“Band 1”) and the second waveguide being configured to transmit optical signals having wavelengths in a second spectral band (“Band 2”), the wavelengths in Band 1 overlapping the wavelengths in Band 2;
wherein the first and second waveguide each comprise a heterostructure comprising a core layer, a bottom cladding layer and a top cladding layer;
wherein the same layer of material forms both a core of the first waveguide and the bottom cladding layer of the second waveguide;
and
wherein an overall bandwidth of the platform is greater than either Band 1 or Band 2.

2 more elements

An ultra-broadband photonic integrated circuit, comprising:

a first light-emitting device bonded to an upper surface of a first waveguide circuit, the first light-emitting device being configured to emit light having wavelengths in a first spectral band (“Band 1”) and the waveguides in the first waveguide circuit being configured to transmit light having wavelengths in Band 1;
and
a second light-emitting device bonded to an upper surface of a second waveguide circuit, the second light-emitting device being configured to emit light having wavelengths in a second spectral band (“Band 2”) and the waveguides in the second waveguide circuit being configured to transmit light having wavelengths in Band 2, the wavelengths in Band 1 overlapping the wavelengths in Band 2;
wherein the first and second waveguide circuits are situated on a single chip, the waveguides in the first and second waveguide circuits each comprising a heterostructure comprising a core layer and a cladding layer, the same layer of material forming both a core of waveguides in the first waveguide circuit and a cladding layer of waveguides in the second waveguide circuit;
and
wherein the integrated circuit can operate at wavelengths in a spectral band broader than either Band 1 or Band 2.

3 more elements

Dependencies are inferred from the claim text.

Ultra-Broadband Photonic Integrated Circuit Platform and Ultra-Broadband Photonic Integrated Circuit

Life of this patent

Ultra-Broadband Photonic Integrated Circuit Platform and Ultra-Broadband Photonic Integrated Circuit

Life of this patent

Abstract

Claims26