Variable buried oxide thickness for a waveguide

A semiconductor structure comprising:

• a plurality of waveguide structures embedded within a semiconductor handle substrate, each waveguide structure of said plurality of waveguide structures comprising, from bottom to top, a bottom oxide portion, a waveguide core material portion and a top oxide portion, wherein topmost surfaces of each waveguide structure of said plurality of waveguide structures are coplanar with a topmost surface of said semiconductor handle substrate;
• an oxide capping layer located on said topmost surfaces of each waveguide structure of said plurality of waveguide structures and said topmost surface of said semiconductor handle substrate;
• and
• a plurality of semiconductor devices located above a topmost surface of said oxide capping layer, each semiconductor device of said plurality of semiconductor devices comprises a portion of a semiconductor material that is in direct contact with a portion of said topmost surface of said oxide capping layer.