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US 2016/0109506 A1Published application
Semiconductor device with upset event detection and method of making
AssigneeNXP USA, Inc.
InventorsMARK D. HALL, STEVEN G.H. ANDERSON, MEHUL D. SHROFF
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Abstract
A semiconductor device includes a substrate, first electronic circuitry formed on the substrate, a first diode buried in the substrate under the first electronic circuitry, and a first fault detection circuit coupled to the first diode to detect energetic particle strikes on the first electronic circuitry.
Claims20
A semiconductor device, comprising:
- a substrate having a first conductivity type;
- first electronic circuitry formed on a first major surface of the substrate;
- a first doped region in the substrate, wherein the first doped region has a second conductivity type opposite the first conductivity type, and the first doped region underlies the first electronic circuitry and is separated from the first major surface of the substrate by a first portion of the substrate;
- a first conductive contact formed between the first doped region and the first major surface of the substrate, the first conductive contact is in a first location of the first doped region;
- and
- a fault detection module coupled to the first doped region through the first conductive contact.
3 more elements
A semiconductor device comprising:
- a substrate;
- first electronic circuitry formed on the substrate;
- a first diode buried in the substrate under the first electronic circuitry;
- and
- a first fault detection circuit coupled to the first diode to detect energetic particle strikes on the first electronic circuitry.
2 more elements
A method comprising:
- forming a first diode in a semiconductor substrate, wherein the first diode is buried in the semiconductor substrate;
- and
- coupling a first fault detection circuit to the first diode, wherein an electrical characteristic of the first diode has a change when a particle impacts the semiconductor substrate with a measurable level of energy, and the first fault detection circuit detects the change in the electrical characteristic.
Dependencies are inferred from the claim text.