US 2016/0109230 A1 · Metrology Of Multiple Patterning Processes

Abstract

Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a primary, multiple patterned target is measured and a value of a parameter of interest is directly determined from the measured data by a Signal Response Metrology (SRM) measurement model. In some other examples, a primary, multiple patterned target and an assist target are measured and a value of a parameter of interest is directly determined from the measured data by a Signal Response Metrology (SRM) measurement model. In some other examples, a primary, multiple patterned target is measured at different process steps and a value of a parameter of interest is directly determined from the measured data by a Signal Response Metrology (SRM) measurement model.

Claims20

Dependent claims

A method comprising:

receiving a first amount of optical measurement data associated with measurements of a first plurality of measurement sites on a surface of a semiconductor wafer, wherein each of the first plurality of measurement sites includes a multiple patterned metrology target characterized by at least one parameter of interest generated by at least two patterning steps of a multiple patterning process, wherein the at least one parameter of interest is indicative of a geometric error induced by the multiple patterning process;
determining a value of the at least one parameter of interest associated with each of the first plurality of measurement sites based on the first amount of measurement data and a signal response metrology (SRM) model, wherein the SRM model is an input-output model measurement model that directly relates the received optical measurement data to a value of the at least one parameter of interest;
and
storing the value of the at least one parameter of interest in a memory.

1 more element

A system comprising:

a metrology tool including an illumination source and a detector configured to perform measurements of a target structure;
and
a computing system configured to:
receive a first amount of optical measurement data associated with measurements of a first plurality of measurement sites on a surface of a semiconductor wafer, wherein each of the first plurality of measurement sites includes a multiple patterned metrology target characterized by at least one parameter of interest generated by at least two patterning steps of a multiple patterning process, wherein the at least one parameter of interest is indicative of a geometric error induced by the multiple patterning process;
determine a value of the at least one parameter of interest associated with each of the first plurality of measurement sites based on the first amount of measurement data and a signal response metrology (SRM) model, wherein the SRM model is an input-output model measurement model that directly relates the received optical measurement data to a value of the at least one parameter of interest;
and
store the value of the at least one parameter of interest in a memory.

4 more elements

A non-transitory, computer-readable medium, comprising:

code for causing a computer to receive a first amount of optical measurement data associated with measurements of a first plurality of measurement sites on a surface of a semiconductor wafer, wherein each of the first plurality of measurement sites includes a multiple patterned metrology target characterized by at least one parameter of interest generated by at least two patterning steps of a multiple patterning process, wherein the at least one parameter of interest is indicative of a geometric error induced by the multiple patterning process;
code for causing the computer to determine a value of the at least one parameter of interest associated with each of the first plurality of measurement sites based on the first amount of measurement data and a signal response metrology (SRM) model, wherein the SRM model is an input-output model measurement model that directly relates the received optical measurement data to a value of the at least one parameter of interest;
and
code for causing the computer to store the value of the at least one parameter of interest in a memory.

1 more element

Dependencies are inferred from the claim text.

Metrology Of Multiple Patterning Processes

Life of this patent

Metrology Of Multiple Patterning Processes

Life of this patent

Abstract

Claims20