Vitreous silica crucible for pulling of silicon single crystal and method for manufacturing the same

A method for manufacturing a silica glass crucible for pulling of silicon single crystal, wherein the vitreous silica crucible for pulling of silicon single crystal comprises:

• a substantially cylindrical straight body portion having an opening on the top end and extending in a vertical direction, a curved bottom portion, and a corner portion connecting the straight body portion with the bottom portion and a curvature of which is larger than that of the bottom portion, wherein, the vitreous silica crucible comprises a transparent layer on the inside and a bubble layer on the outside thereof, a compressive stress layer in which compressive stress remains in the inner surface side of the transparent layer, and a tensile stress layer in which tensile stress remains and is adjacent to the compressive stress layer at a gradual rate of change of stress, comprising:
• a process of supplying natural silica powder to a rotating mold for manufacturing vitreous silica crucible and forming a layer of the natural silica powder on the inner surface of the rotating mold for manufacturing vitreous silica crucible,
• a process of depositing synthetic silica powder which satisfies following Formula (1) obtained by Raman measurement method on the inside of the layer of the natural silica powder, and
• a process of arc discharging in the natural silica powder and the synthetic silica powder,
• 0.8≦R≦1.0 (1)
• in formula (1), intensity ratio R=(I1+I2)/I0
• I1=peak intensity of Raman shift 492 cm−1 band
• I2=peak intensity of Raman shift 606 cm−1 band
• I0=peak intensity of Raman shift 800 cm−1 band.