Method and apparatus of forming silicon nitride film

An apparatus of forming a silicon nitride film on a surface to be processed of a target object, comprising:

• a processing chamber configured to perform a film forming process on the target object;
• a silicon source gas supply mechanism configured to supply a silicon source gas into the processing chamber;
• a decomposition accelerating gas supply mechanism configured to supply a decomposition accelerating gas into the processing chamber;
• a nitriding gas supply mechanism configured to supply a nitriding gas into the processing chamber;
• and
• a heating unit configured to heat the processing chamber;
• and
• a control unit configured to control the silicon source gas supply mechanism, the decomposition accelerating gas supply mechanism, the nitriding gas supply mechanism, and the heating unit such that a silicon nitride film forming method is performed,
• wherein the silicon nitride film forming method comprises:
• repeating a first process a first predetermined number of times, the process including supplying the silicon source gas containing silicon toward the surface to be processed and supplying the decomposition accelerating gas containing a material for accelerating decomposition of the silicon source gas toward the surface to be processed;
• performing a second process of supplying the nitriding gas containing nitrogen toward the surface to be processed a second predetermined number of times;
• and
• performing one cycle a third predetermined number of times, the one cycle being a sequence including the repetition of the first process and the performance of the second process to form the silicon nitride film on the surface to be processed, and
• wherein the first predetermined number is equal to or greater than 2, and the second and third predetermined numbers are equal to or greater than 1.