Thin film manufacturing method and atomic layer deposition apparatus
OwnerSung Hyun PARK, In Chul SHIN +2inventors
InventorsSung Hyun PARK, In Chul SHIN, Keun Woo LEE, Kyung Joon KIM
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Abstract
A method of manufacturing a silicon nitride (Si3N4) film at low temperature using an atomic layer deposition (ALD), and an ALD apparatus for the same are disclosed. The method of manufacturing a Si3N4 film uses a silicon precursor material including silicon as a source gas, an N2 gas activated by plasma as a reaction gas, and an N2 gas as a purge gas, and manufactures a Si3N4 film by providing gases in an order of the source gas, the purge gas, the reaction gas, and the purge gas.
Claims12
A thin film manufacturing method of manufacturing a silicon nitride (Si3N4) film by providing gases in an order of a source gas, a purge gas, a reaction gas, and the purge gas,
- wherein a silicon precursor material comprising silicon is used as the source gas, a nitrogen (N2) gas activated by plasma is used as the reaction gas, and an N2 gas is used as the purge gas.
An atomic layer deposition (ALD) apparatus comprising:
- a process chamber;
- a substrate supporter provided in the process chamber, the substrate supporter on which a plurality of substrates is disposed;
- and
- a gas sprayer provided over the substrate supporter in the process chamber to spray a source gas, a reaction gas, and a purge gas onto the plurality of substrates consecutively,
- wherein a silicon precursor material comprising silicon is used as the source gas, a nitrogen (N2) gas activated by plasma is used as the reaction gas, an N2 gas is used as the purge gas, and the ALD apparatus manufactures a silicon nitride (Si3N4) film by providing gases in an order of the source gas, the purge gas, the reaction gas, and the purge gas.
Dependencies are inferred from the claim text.