Method for filling vias and substrate-via filling vacuum processing system
AssigneeEvatec Advanced Technologies AG
InventorsMOHAMED ELGHAZZALI, Jurgen WEICHART
Life of this patent
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Abstract
Vias of at least approx. 1:1 aspect ratio in substrates are filled with material which exhibits a thermally driven amorphous/crystalline phase change. This is performed within a vacuum process chamber. During a first timespan the material is sputter-deposited by DC sputtering from a material target. In a subsequent timespan a void, which may remain in the via as material covered by the addressed sputtering, is opened by etching performed with the help of an inductively coupled plasma generated by an Rf driven electric coil and applying to the substrate with the via an Rf bias.
Claims34
A method of material filling vias having an aspect ratio of at least approximately 1:1 within a substrate and thereby manufacturing substrates comprising vias filled with said material, said material being a chalcogenide glass material exhibiting a thermally driven amorphous/crystalline phase change out of the group of materials:
- GeSbTe, AgInSbTe, InSe, SbSe, SbTe, InSbTe, GeSbSe, GeSbTeSe, AgInSbSeTe, thereby especially of GeSbTe (GST)
- comprising:
- step a):
- sputter-depositing by DC sputtering said material from a target arrangement upon an area of at least one of said substrates comprising at least one via, thereby covering the via top, via sidewalls and via bottom of said via with a covering of said material and including a via top covering, said sputter depositing being performed to an extent to leave a void in said covered via, said void being open towards the surrounding of said via top covering;
- subsequent to step a) a step b):
- enlarging said void towards said surrounding by etching with the help of an inductively coupled plasma and Rf biased substrate;
- subsequent to step b) a step c):
- sputter-depositing said material by DC sputtering upon said area to an extent so as to
- i) Completing a filling of said via by said material at least from said via bottom to said via top;
- or
- ii) leaving a void in said covered via, said void being open towards the surrounding of said via top covering;
- repeating in the case of ii) step b) and c),
- thereby performing steps a) to c) in one common vacuum process chamber.
A substrate-via filling vacuum system comprising
- a vacuum process chamber with at least one substrate holder therein;
- said vacuum process chamber comprising
- a sputtering target arrangement comprising one or more than one targets the material of the one target or the materials of the more than one targets in combination being of all elements of one material out of the group:
- GeSbTe, AgInSbTe, InSe, SbSe, SbTe, InSbTe, GeSbSe, GeSbTeSe, AgInSbSeTe, thereby especially of GeSbTe (GST);
- an electric coil arrangement with at least one electric coil wound around at least a part of the inner volume of said vacuum process chamber;
- a first Rf power supply arrangement;
- a second Rf power supply arrangement;
- a continuous or pulsed DC power supply arrangement;
- a process control unit;
- said process control unit being adapted to control:
- establishing of a supply operational connection of said DC power supply arrangement to said sputtering target arrangement for a first predetermined time span;
- subsequent to said first time span, and for a second predetermined timespan:
- disabling said supply operational supply connection of said DC power supply arrangement to said sputtering source arrangement;
- and
- establishing of a supply operational connection of said first Rf power supply arrangement to said electric coil arrangement and establishing a bias operational connection of said second Rf Power Supply arrangement to said substrate holder.
Dependencies are inferred from the claim text.