Compositions for removing residues and related methods
AssigneeMicron Technology, Inc.
InventorsCole S. Franklin, Jerome A. Imonigie
Life of this patent
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Abstract
Compositions for removing residues from a semiconductor structure. The compositions comprise water, a base, a polydentate chelator, a degasser, and a fluorine source. The compositions comprise greater than or equal to approximately 99 wt % of the water and are formulated to exhibit a pH of from approximately 10.0 to approximately 12.0. Methods of forming and using the compositions are also disclosed.
Claims25
A composition for removing residues from a semiconductor structure, the composition comprising:
- water, a base, a polydentate chelator, a degasser, and a fluorine source, the composition comprising greater than or equal to approximately 99 wt % of water and formulated to exhibit a pH of from approximately 10.0 to approximately 12.0.
A method of removing residues from a semiconductor structure, the method comprising:
- exposing a semiconductor structure to a composition to remove residues from the semiconductor structure, the semiconductor structure comprising at least one exposed chalcogenide material and the composition comprising water, a base, a polydentate chelator, a degasser, and a fluorine source, the composition comprising greater than or equal to approximately 99 wt % of water and formulated to exhibit a pH of from approximately 10.0 to approximately 12.0.
A method of removing residues from a semiconductor structure, the method comprising:
- forming a semiconductor structure comprising at least one chalcogenide material and an organic material in a stack structure;
- and
- exposing the semiconductor structure to a composition to remove residues from the semiconductor structure, the composition comprising:
- water, a base, a polydentate chelator, a degasser, and a fluorine source, the composition comprising greater than or equal to approximately 99 wt % of water and formulated to exhibit a pH of from approximately 10.0 to approximately 12.0.
A method of forming a composition for removing residues from a semiconductor structure, the method comprising:
- dissolving ethylenediamine tetraacetic acid in a solution of water and tetramethylammonium hydroxide;
- and
- adding dipropylene glycol and ammonium fluoride to the solution to form the composition.
Dependencies are inferred from the claim text.