Photoresist having decreased outgassing
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Han Lai, Ching-Yu Chang
Life of this patent
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Abstract
Provided is a method of fabricating a semiconductor device. A substrate is provided. A material layer is formed over the substrate. A photoresist layer is formed over the material layer. The photoresist layer contains a polymer. The polymer includes an acid labile group (ALG) that is linked to a plurality of carboxylic acid function groups. The photoresist layer is then patterned using a lithography process, for example an extreme ultraviolet (EUV) lithography process.
Claims23
A photoresist material, comprising:
- a polymer, wherein the polymer includes an acid labile group (ALG) that is linked to a plurality of carboxylic acid function groups, and wherein the ALG has one of the following chemical formulas:
- and wherein:
- Z represents a C4˜C15 cyclic alkyl or cyclic alkyl derivative;
- R1, R2, R3, and R4 each represent a respective C1˜C15 alkyl group;
- and
- Rxa, Rxb, and Rxc each represent an alkyl group having a carbon number between 1˜10.
2-7. (canceled)
A photoresist material, comprising:
- a polymer, wherein the polymer includes an acid labile group (ALG) that is linked to two or more carboxylic acid function groups, and wherein the ALG has one of the following chemical formulas:
- wherein:
- Z represents a C4˜C15 cyclic alkyl or cyclic alkyl derivative;
- R1, R2, R3, and R4 each represent a respective C1˜C15 alkyl group;
- and
- Rxa, Rxb, and Rxc each represent an alkyl group having a carbon number between 1˜10.
A method of fabricating a semiconductor device, comprising:
- providing a substrate;
- forming a photoresist layer over the substrate, the photoresist layer containing a polymer that includes an acid labile group (ALG) that is linked to a plurality of carboxylic acid function groups;
- and
- patterning the photoresist layer using a lithography process;
- wherein the ALG is linked to two or more carboxylic acid function groups, and wherein the ALG has one of the following chemical formulas:
- wherein:
- Z represents a C4˜C15 cyclic alkyl or cyclic alkyl derivative;
- R1, R2, R3, and R4 each represent a respective C1˜C15 alkyl group;
- and
- Rxa, Rxb, and Rxc each represent an alkyl group having a carbon number between 1˜10.
14-15. (canceled)
(canceled)
Dependencies are inferred from the claim text.