Method for the fabrication of thin-film transistors together with other components on a substrate
AssigneeUniversitaet Stuttgart
InventorsPATRICK SCHALBERGER, NORBERT FRUEHAUF, MARCUS HERRMANN
Life of this patent
Estimating the term…
Abstract
A method for the fabrication of thin-film transistors together with micromechanical components, other active electrical components or both on an amorphous or polycrystalline substrate includes disposing the thin-film transistors and the other components on different areas of the substrate.
Claims11
A method for the fabrication of thin-film transistors together with micromechanical components, other active electrical components or both on an amorphous or polycrystalline substrate, wherein the thin-film transistors and the other active electrical components are each disposed on different areas of the substrate, the method comprising the stapes of:
- applying a first layer of an electrode material to the substrate;
- structuring the first layer into drain and source electrodes in an area of the thin-film transistors and into electrodes in an area of other electrical components;
- after structuring the first layer, applying a semiconductor layer;
- structuring the semiconductor layer such that the drain and source electrodes in the area of the transistors and the electrodes in the area of the other electrical components remain at least partially covered by the semiconductor layer, and that micromechanical components in an area of micromechanical components that are subsequently to have cavities remain covered;
- depositing a dielectric layer;
- structuring the dielectric layer to a gate dielectric of the thin-film transistors in the area of the transistors, at least partially covering the semiconductor layer above the electrodes in the area of the other electrical components and at least partially removing the semiconductor layer above the micromechanical components in the area of the micromechanical components;
- applying a second layer of an electrode material;
- structuring the second layer of electrode material into gate electrodes in the area of the transistors, into second electrodes in areas above the semiconductor layer and above the first electrodes (102c) the area of the other electrical components in and into electrodes that at least partially cover the semiconductor layer in the area of the micromechanical components;
- and
- etching away the semiconductor layer in the area of the micromechanical components.
Dependencies are inferred from the claim text.