Cmp polishing solution and polishing method using same
AssigneeHitachi Chemical Company, Ltd.
InventorsMasahiro SAKASHITA, Masayuki HANANO, Kouji MISHIMA
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Abstract
A CMP polishing liquid for polishing a ruthenium-based metal, comprising polishing particles, an acid component, an oxidizing agent, a triazole-based compound, a quaternary phosphonium salt and water, wherein the acid component contains at least one selected from the group consisting of inorganic acids, monocarboxylic acids, carboxylic acids having a plurality of carboxyl groups and having no hydroxyl group, and salts thereof, the polishing particles have a negative zeta potential in the CMP polishing liquid, and the pH of the CMP polishing liquid is 3.0 or more and less than 7.0.
Claims14
A CMP polishing liquid for polishing a ruthenium-based metal, comprising:
- polishing particles;
- an acid component;
- an oxidizing agent;
- a triazole-based compound;
- a quaternary phosphonium salt;
- and
- water,
- wherein the acid component contains at least one selected from the group consisting of inorganic acids, monocarboxylic acids, carboxylic acids having a plurality of carboxyl groups and having no hydroxyl group, and salts thereof,
- the polishing particles have a negative zeta potential in the CMP polishing liquid, and
- a pH of the CMP polishing liquid is 3.0 or more and less than 7.0.
Dependencies are inferred from the claim text.