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AssigneeInternational Business Machines Corporation
InventorsCheng-Wei Cheng, Ning Li, Devendra K. Sadana, Kuen-Ting Shiu
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An electrical device that includes a first semiconductor device positioned on a first portion of a substrate and a second semiconductor device positioned on a third portion of the substrate, wherein the first and third portions of the substrate are separated by a second portion of the substrate. An interlevel dielectric layer is present on the first, second and third portions of the substrate. The interlevel dielectric layer is present over the first and second semiconductor devices. An optical interconnect is positioned over the second portion of the semiconductor substrate. At least one material layer of the optical interconnect includes an epitaxial material that is in direct contact with a seed surface within the second portion of the substrate through a via extending through the least one interlevel dielectric layer.
An electrical device comprising:
The electrical device of claim 11, wherein the optoelectronic light detector device comprises a first conductivity type III-V semiconductor layer, an intrinsic III-V semiconductor material layer, and a second conductivity type III-V semiconductor material layer.
An electrical device comprising:
The electrical device of claim 11, wherein a third semiconductor device is present underlying the optical interconnect, the third semiconductor device being present on an upper surface of the semiconductor substrate in the second portion of the semiconductor substrate, the third semiconductor device being covered by the at least one interlevel dielectric layer.
The electrical device of claim 14, wherein the third semiconductor device comprises a third switching device selected from the group consisting of field effect transistor (FET), fin field effect transistor (FinFET), metal oxide semiconductor field effect transistor (MOSFET), bipolar junction transistor (BJT), Schottky barrier semiconductor device, junction field effect transistor (JFET) and combinations thereof, or the third semiconductor device comprises a third memory device selected from the group consisting of flash memory, dynamic random access memory, embedded dynamic random access memory and combinations thereof.
The electrical device of claim 14, wherein there is no continuous physical electrical communication structures between the first semiconductor device and the second semiconductor device.
A method of forming an electrical device comprising:
Dependencies are inferred from the claim text.