Method of fabricating a variable resistance memory device
AssigneeSamsung Electronics Co., Ltd.
InventorJUNKU AHN
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Abstract
A method of fabricating a variable resistance memory device includes preparing a substrate having a lower electrode, forming a mold layer on the substrate, patterning the mold layer to form an opening, forming a variable resistance layer having a first portion in the opening and a second portion disposed on a top surface of the mold layer, and separating the second portion of the variable resistance layer from the first portion by irradiating the variable resistance layer to form a variable resistance element in the opening.
Claims20
A method of fabricating a variable resistance memory device, the method comprising:
- providing a substrate on which a lower electrode is disposed;
- forming a mold layer on the substrate;
- patterning the mold layer to form an opening;
- forming a variable resistance layer on the mold layer, the variable resistance layer having a first portion in the opening, and a second portion extending over a top surface of the mold layer;
- and
- separating the second portion of the variable resistance layer from the first portion to thereby form a variable resistance element in the opening, wherein said separating comprise irradiating the variable resistance using a laser.
A method of fabricating a variable resistance memory device, the method comprising:
- providing a substrate on which a lower electrode is disposed;
- forming a mold layer on the substrate;
- patterning the mold layer to form an opening;
- forming a variable resistance layer on the mold layer, the variable resistance layer having a first portion in the opening, an air pocket in the first portion, and a second portion extending over a top surface of the mold layer;
- and
- irradiating the variable resistance layer with light emitted by a laser to cause the second portion of the variable resistance layer to flow into the opening and thereby form a variable resistance element in the opening.
A method of fabricating a variable resistance memory device, the method comprising:
- forming a mold layer on the substrate;
- patterning the mold layer to form an opening in the mold layer;
- forming a blanket variable resistance layer on the mold layer to such a thickness that the variable resistance layer extends within the opening and across a top surface of the mold layer, wherein the variable resistance layer is of material whose resistance changes with changes in voltage impressed thereacross and/or current supplied thereto;
- and
- forming a variable resistance element in the opening by removing at least all of the variable resistance layer that extends across the top surface of the mold layer and leaving some of the variable resistance layer within the opening, wherein the forming of the variable resistance element comprises irradiating the variable resistance layer.
Dependencies are inferred from the claim text.