Resistive memory with a thermally insulating region
OwnerBeth Cook, Nirmal Ramaswamy +3inventors
InventorsBeth Cook, Nirmal Ramaswamy, Shuichiro Yasuda, Scott Sills, Koji Miyata
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Abstract
A resistive memory includes a memory cell having a first electrode, a second electrode and a resistive memory element between the first electrode and the second electrode. The memory cell includes a thermally insulating region. The thermally insulating region may be included in at least one electrode of the memory cell and/or within an electrically insulating region. The thermally insulating region can confine heat within the memory cell and thereby can reduce the current and/or voltage needed to write information in the resistive memory element.
Claims16
A resistive memory comprising:
- a memory cell, including:
- a first electrode having a thermally insulating region;
- a second electrode;
- and
- a ReRAM memory element between the first electrode and the second electrode.
A resistive memory comprising:
- a memory cell, including:
- a first electrode;
- a second electrode;
- a ReRAM memory element between the first electrode and the second electrode;
- and
- a dielectric region comprising a thermally insulating material.
Dependencies are inferred from the claim text.