Memory cell with independently-sized electrode
AssigneeMicron Technology, Inc.
InventorsMarcello Ravasio, Samuele Sciarrillo, Andrea Gotti
Life of this patent
Estimating the term…
Abstract
Memory cell architectures and methods of forming the same are provided. An example memory cell can include a switch element and a memory element. A middle electrode is formed between the memory element and the switch element. An outside electrode is formed adjacent the switch element or the memory element at a location other than between the memory element and the switch element. A lateral dimension of the middle electrode is different than a lateral dimension of the outside electrode.
Claims21
1-20. (canceled)
A method for forming a memory cell, comprising:
- forming a switch element between a first electrode and a second electrode;
- forming a memory element between the second electrode and a third electrode;
- and
- changing a lateral dimension of the second electrode to be less than a lateral dimension of the first electrode.
A method for forming a memory cell, comprising:
- forming a stack of materials, the stack of materials including a first electrode, a switch element, a second electrode, a memory element, and a third electrode, the second electrode being located between the switch element and the memory element;
- and
- etching, via a selective/isotropic process, one of the first, the second, and the third electrode to have a lateral dimension less than a lateral dimension of the other electrodes.
A memory cell, comprising:
- a stack of materials including a first electrode, a switch element, a second electrode, a memory element, and a third electrode, wherein the second electrode is located between the switch element and the memory element;
- and
- wherein one of the first electrode, the second electrode, and the third electrode has a lateral dimension less than a lateral dimension of the other electrodes.
Dependencies are inferred from the claim text.