Magnetoresistive memory device and manufacturing method of the same

A manufacturing method of a magnetoresistive memory device, comprising:

• forming a first magnetic layer on a substrate;
• forming a magnetoresistive effect element on the first magnetic layer;
• forming a mask on a part of the magnetoresistive effect element;
• selectively etching the magnetoresistive effect element using the mask;
• forming a sidewall insulating film on a sidewall of the magnetoresistive effect element exposed by the etching;
• selectively etching the first magnetic layer using the mask and the sidewall insulating film and forming a deposition layer containing a magnetic material on a sidewall of the first magnetic layer and the sidewall insulating film;
• and
• removing the deposition layer.

A magnetoresistive memory device, comprising:

• a first magnetic layer including a first metal formed on a substrate;
• a first nonmagnetic layer formed on the first magnetic layer;
• a layered structure including a second magnetic layer formed on the first nonmagnetic layer, a second nonmagnetic layer, and a third magnetic layer;
• a first sidewall insulating film covering a part of a sidewall of the layered structure;
• and
• a second sidewall insulating film formed on the first sidewall insulating film, wherein
• the second sidewall insulating film includes the first metal.