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US 2016/0104819 A1Published application
Method for producing an optoelectronic semiconductor chip
AssigneeOSRAM Opto Semiconductors GmbH
InventorsChristian SCHMID, Julia GROSSER, Richard FLOETER, Markus BROELL
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Abstract
A method for producing an optoelectronic semiconductor chip comprises the following steps: providing a substrate, depositing a sacrificial layer, depositing a functional semiconductor layer sequence, laterally patterning the functional semiconductor layer sequence, and oxidizing the sacrificial layer in a wet thermal oxidation process.
Claims20
Method for producing an optoelectronic semiconductor chip having the following steps:
- providing a substrate;
- depositing a sacrificial layer;
- depositing a functional semiconductor layer sequence;
- laterally patterning the functional semiconductor layer sequence;
- oxidizing the sacrificial layer in a wet thermal oxidation process.
2 more elements
Method for producing an optoelectronic semiconductor chip having the following steps:
- providing a substrate;
- depositing a sacrificial layer;
- depositing a functional semiconductor layer sequence;
- laterally patterning the functional semiconductor layer sequence;
- oxidizing the sacrificial layer in a wet thermal oxidation process, wherein
- the substrate comprises GaAs or consists of GaAs,
- the sacrificial layer comprises AlxGa1-xAs or consists thereof, wherein the ratio of aluminum to gallium is greater than 80 to 20, preferably greater than 93 to 7, and
- AlOxHy is formed during oxidation of the sacrificial layer.
5 more elements
Dependencies are inferred from the claim text.