Micro-light-emitting diode
AssigneeMikro Mesa Technology Co., Ltd.
InventorPei-Yu CHANG
Life of this patent
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Abstract
A micro-light-emitting diode (micro-LED) includes a first type semiconductor layer, a second type semiconductor layer, a dielectric layer, and electrodes. The second type semiconductor layer is disposed on or above the first type semiconductor layer. The dielectric layer is disposed on the second type semiconductor layer. The dielectric layer includes openings therein to expose parts of the second type semiconductor layer. The electrodes partially are disposed on the dielectric layer and respectively electrically coupled with the exposed parts of the second type semiconductor layer through the openings of the dielectric layer, in which the electrodes are separated from each other.
Claims20
A micro-light-emitting diode (micro-LED), comprising:
- a first type semiconductor layer;
- a second type semiconductor layer disposed on or above the first type semiconductor layer;
- a dielectric layer disposed on the second type semiconductor layer and the dielectric layer having a plurality of openings therein to expose a plurality of parts of the second type semiconductor layer;
- and
- a plurality of electrodes partially disposed on the dielectric layer and respectively electrically coupled with the exposed parts of the second type semiconductor layer through the openings of the dielectric layer, wherein the electrodes are insulated from each other.
A method for manufacturing a micro-LED, comprising:
- forming a second type semiconductor layer on or above a first type semiconductor layer;
- forming a dielectric layer on the second type semiconductor layer;
- forming a plurality of openings in the dielectric layer;
- and
- forming a plurality of electrodes partially on the dielectric layer and electrically coupled with the second type semiconductor layer respectively through the openings, wherein the electrodes are insulated from each other.
Dependencies are inferred from the claim text.