Light emitting device and method for preparing the same

A method of growing a p-type semiconductor layer using metal organic chemical vapor deposition, comprising:

• growing a low concentration doping layer over a substrate within a chamber by supplying a nitrogen source gas, a gallium source gas, an Mg source gas, N2 gas and H2 gas into the chamber;
• growing an undoped layer over the low concentration doping layer by supplying a nitrogen source gas, a gallium source gas and N2 gas into the chamber while blocking supply of the Mg source gas and the H2 gas;
• and
• growing a high concentration doping layer on the undoped layer by supplying a nitrogen source gas, a gallium source gas, an Mg source gas, N2 gas and H2 gas into the chamber.

A method of fabricating a light emitting device, comprising:

• growing an n-type semiconductor layer, an active layer, an electron blocking layer, and a p-type semiconductor layer over a substrate by metal organic chemical vapor deposition, wherein the growing the p-type semiconductor layer includes:
• growing a low concentration doping layer on the electron blocking layer by supplying a nitrogen source gas, a gallium source gas, an Mg source gas, N2 gas and H2 gas into the chamber;
• growing an undoped layer on the low concentration doping layer by supplying a nitrogen source gas, a gallium source gas and N2 gas into the chamber while blocking supply of the Mg source gas and the H2 gas;
• and
• growing a high concentration doping layer on the undoped layer by supplying a nitrogen source gas, a gallium source gas, an Mg source gas, N2 gas and H2 gas into the chamber.