Vertical-type semiconductor light-emmitting device and method of fabricating the vertical-type light-emitting device

A semiconductor light-emitting device comprising:

• an active layer and a first semiconductor layer sequentially stacked on a second semiconductor layer, the active layer and the second semiconductor layer including a plurality of contact holes exposing portions of the first semiconductor layer in a first region of the second semiconductor layer;
• a plurality of first electrodes on respective ones of the exposed portions of the first semiconductor layer;
• a second electrode on the second semiconductor layer, the second electrode adjacent to the plurality of contact holes;
• a first insulating layer on the second electrode in the first region extending to cover the plurality of contact holes to expose the plurality of first electrodes, the first insulating layer configured to insulate the plurality of first electrodes from the active layer and the second semiconductor layer;
• a first bonding layer on the first insulating layer and filling the plurality of contact holes, the first bonding layer connected to the plurality of first electrodes;
• a second bonding layer on the second electrode;
• and
• a conductive layer including a first portion contacting a lower surface of the first bonding layer and a second portion contacting a lower surface of the second bonding layer, the second portion of the conductive layer surrounding the first portion of the conductive layer.