Method for producing the p-n junction of a thin-film photovoltaic cell and corresponding method for producing a photovoltaic cell
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsGiovanni Altamura, Louis Grenet, Simon Perraud, Frédéric Roux
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Abstract
A method for producing a P-N junction in a thin film photovoltaic cell comprising a deposition step in which are carried out successively: a layer of precursors of a photovoltaic material of type P or N, a barrier layer and a layer of precursors of a semiconducting material of type N or P, this deposition step being followed by an annealing step carried out with a supply of S and/or Se, this annealing step leading to the formation of an absorbing layer of the type P or N and of a buffer layer of type N or P and of a P-N junction at the interface between said layers.
Claims11
A method for producing a P-N junction in a thin film photovoltaic cell comprising a deposition step in which are successively carried out:
- a layer of precursors of a photovoltaic material of type P or N, a barrier layer, and a layer of precursors of a semiconducting material of type N or P, this deposition step being followed by a single annealing step carried out with a supply of S and/or Se, this annealing step leading to the formation of an absorbing layer of type P or N and of a buffer layer of type N or P and of a P-N junction at the interface between said absorbing and buffer layers, the barrier layer preventing chemical diffusion and oxidation at the interface between the absorbing layer and the buffer layer during this annealing step.
Dependencies are inferred from the claim text.