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US 2016/0104805 A1Published application
Optical semiconductor device including blackened tarnishable bond wires and related methods
AssigneeStmicroelectronics Pte Ltd
InventorsLoic Pierre Louis Renard, Kok-Leong Cheng
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Abstract
A method for making an optical semiconductor device may include forming an integrated circuit (IC) including an optical sensing area and a bond pads outside the optical sensing area, and coupling proximal ends of respective bond wires to corresponding bond pads. The method may further include performing a blackening treatment on the bond wires.
Claims21
A method for making an optical semiconductor device comprising:
- forming an integrated circuit (IC) comprising an optical sensing area and a plurality of bond pads outside the optical sensing area;
- coupling proximal ends of a plurality of respective bond wires to corresponding bond pads;
- and
- performing a blackening treatment on the plurality of bond wires.
1 more element
A method for making an optical semiconductor device comprising:
- forming an integrated circuit (IC) comprising an optical sensing area and a plurality of bond pads outside the optical sensing area on a semiconductor substrate without a guardband between the optical sensing area and the plurality of bond pads;
- coupling proximal ends of a plurality of respective bond wires to corresponding bond pads, the plurality of bond wires comprising silver;
- and
- performing a blackening treatment on the plurality of bond wires.
1 more element
16-20. (canceled)
A method for making an optical semiconductor device comprising:
- forming an integrated circuit (IC) comprising an optical sensing area and a plurality of bond pads outside the optical sensing area;
- coupling proximal ends of a plurality of respective bond wires to corresponding bond pads, the bond wires comprising at least one tarnishable metal;
- and
- performing a blackening treatment on the plurality of bond wires to form a layer of tarnish thereon.
1 more element
Dependencies are inferred from the claim text.