Nonvolatile semiconductor memory element, nonvolatile semiconductor memory, and method for operating nonvolatile semiconductor memory element

A memory comprising:

• a semiconductor substrate;
• a lower electrode disposed above the semiconductor substrate;
• an insulating film disposed on the lower electrode;
• and
• an upper electrode disposed on the insulating film;
• wherein the insulating film includes:
• a first insulating film including Al oxide or Al oxynitride and having a thickness of 4 nm or less;
• a second insulating film disposed on the first insulating film and including Zr oxide;
• and
• a third insulating film disposed on the second insulating film and including Al oxide or Al oxynitride;
• wherein a thickness of the first insulating film is less than a thickness of the second insulating film.

A memory comprising:

• a semiconductor substrate;
• a lower electrode disposed above the semiconductor substrate;
• an insulating film disposed on the lower electrode;
• and
• an upper electrode disposed on the insulating film;
• wherein the insulating film includes:
• a first insulating film including Al oxynitride and having a thickness of 4 nm or less;
• a second insulating film disposed on the first insulating film and including Zr oxide;
• and
• a third insulating film disposed on the second insulating film and including Al oxynitride;
• wherein a thickness of the first insulating film is less than a thickness of the second insulating film.