Memory devices, methods of manufacturing the same, and methods of accessing the same
AssigneeInstitute of Microlectronics, Chinese Academy of Sciences
InventorHuilong Zhu
Life of this patent
Estimating the term…
Abstract
Memory devices, methods of manufacturing the same, and methods of accessing the same are provided. In one embodiment, the memory device may include a substrate, a back gate formed on the substrate, and a transistor. The transistor may include fins formed on opposite sides of the back gate on the substrate and a gate stack formed on the substrate and intersecting the fins. The memory device may further include a back gate dielectric layer formed on side and bottom surfaces of the back gate. The back gate dielectric layer may have a thickness reduced portion at a region facing the fins on one side of the gate stack.
Claims24
A memory device, comprising:
- a substrate;
- a back gate formed on the substrate;
- a transistor, comprising fins formed on opposite sides of the back gate on the substrate and a gate stack formed on the substrate and intersecting the fins;
- and
- a back gate dielectric layer formed on side and bottom surfaces of the back gate,
- wherein the back gate dielectric layer has a thickness reduced portion at a region facing the fins on one side of the gate stack.
A method of manufacturing a memory device, comprising the steps of:
- forming a back gate groove in a substrate;
- forming a back gate dielectric layer on side and bottom walls of the back gate groove;
- forming a back gate by filling a conductive material into the back gate groove;
- exposing a portion of the back gate dielectric layer by selectively removing a portion of the back gate at one end of the back gate groove, reducing the exposed portion of the back gate dielectric layer in thickness, and then refilling a further conductive material into the back gate groove;
- forming fins abutting the back gate dielectric layer by patterning the substrate;
- and
- forming a gate stack on the substrate to intersect the fins,
- wherein the portion of the back gate dielectric layer which is reduced in thickness is disposed on one side of the gate stack and faces the fins.
Dependencies are inferred from the claim text.